midium power transistors (50v / 3a) 2SCR533D ? structure ? dimensions (unit : mm) npn silicon epitaxial planar transistor ? features 1) low saturation voltage v ce (sat) = 0.35v (max.) (i c / i b = 1a / 50ma) 2) high speed switching ? applications driver ? inner circuit (unit : mm) package cpt3 code tl basic ordering unit (pieces) 2500 ? absolute maximum ratings (ta=25c) symbol limits unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6v dc i c 3a pulsed i cp 6a p d 1w p d 10 w junction temperature t j 150 c range of storage temperature t stg -55 to 150 c *1 pw=10ms, single pulse *2 mounted on a substrate *3 t c =25c ? packaging specifications type parameter collector current power dissipation cpt3 (sc-63) y ? ? ? e ? e ? y ? ? ? e ? t ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?05 ? ? ? *1 *2 *3 (1) base (2) collector (3) emitter (1) base (2) collector (3) emitter (1 ) (3) (2) 1/5 2010.12 - rev.a www.rohm.com ?2010 rohm co., ltd. all rights reserved.
2SCR533D ? electrical characteristics (ta=25c) symbol min. typ. max. unit collector-emitter breakdown voltage bv ceo 50 - - v i c = 1ma collector-base breakdown voltage bv cbo 50 - - v i c = 100a emitter-base breakdown voltage bv ebo 6--v i e = 100a collector cut-off current i cbo --1 a v cb = 50v emitter cut-off current i ebo --1 a v eb = 4v collector-emitter staturation voltage v ce(sat) - 130 350 mv i c = 1a, i b = 50ma dc current gain h fe 180 - 450 - v ce = 3v, i c = 50ma turn-on time t on -50-ns storage time t stg - 450 - ns fall time t f -80-ns *1 pulsed *2 see switching time test circuit -pf collector output capacitance c ob v cb = 10v, i e =0a f=1mhz - i c = 1.5a, i b1 = 150ma, i b2 =-150ma, v cc 10v 13 conditions parameter mhz 320 - v ce = 10v i e =-500ma, f=100mhz transition frequency f t - * 2 * 2 * 2 * 1 * 1 ~ _ 2/5 2010.12 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
2SCR533D ? electrical characteristic curves (ta=25 ? c) 0.00 0.10 0.20 0.30 0.40 0.50 0 0.5 1 1.5 2 collector current : i c [a] colector to emitter voltage :v ce [v] fig.1 typical output characteristics 2.5ma 2.0ma 1.5ma 1.0ma 0.5ma 3.0ma 5.0ma ta=25 c 10 100 1000 1 10 100 1000 10000 dc current gain : h fe collector current : i c [ma] fig.2 dc current gain vs. collector current ( i ) ta=25 c v ce =5v 3v 10 100 1000 1 10 100 1000 10000 dc current gain : h fe collector current : i c [ma] fig3. dc current gain vs. collector current ( ii ) v ce =3v ta=125 c 75 c 25 c - 40 c 0.001 0.01 0.1 1 1 10 100 1000 10000 collector saturation voltage : v ce(sat) [v] collector current : i c [ma] fig.4 collector - emitter saturation voltage vs. collector current ( i ) ta=25 c i c /i b =50 20 10 0.001 0.01 0.1 1 1 10 100 1000 10000 collector saturation voltage : v ce(sat) [v] collector current : i c [ma] fig.5 collector - emitter saturation voltage vs. collector current ( ii ) i c /i b =20 ta=125 c 75 c 25 c - 40 c 1 10 100 1000 10000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 collector current : i c [ma] base to emitter voltage : v be [v] fig.6 ground emitter propagation characteristics v ce =3v ta=125 c 75 c 25 c - 40 c 3/5 2010.12 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
2SCR533D 1 10 100 1000 0.1 1 10 100 collector output capacitance : cob(pf) emitter input capacitance : cib(pf) collector - base voltage : v cb (v) emitter - base voltage : v eb (v) fig.7 emitter input capacitance vs. emitter - base voltage collector output capacitance vs. collector - base voltage ta=25 c f=1mhz i e =0a i c =0a cob cib 10 100 1000 10 100 1000 transition frequency : f t [mhz] emitter current : i e [ma] fig.8 gain bandwidth product vs. emitter current ta=25 c v ce =10v 0.01 0.1 1 10 0.1 1 10 100 collector current : i c [a] collector to emitter voltage : v ce [v] fig.9 safe operating area ta=25 c dc(mounted on a substrate) tc=25 c dc pw=10ms pw=1ms tc=25 c single non repetitive pulse 4/5 2010.12 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
2SCR533D ? switching time test circuit base curent waveform collector current waveform v in p w pw 50 s duty cycle Q1% t stg i b1 i b2 90% 10% t on t f i c r l =6.8? i b1 i b2 i c v cc 10v ~ _ ~ _ 5/5 2010.12 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
r1010 a www.rohm.com ? 2010 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without notice. the content specied herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any product, such as derating, redunda ncy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospac e machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.
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